Gogl, D.D.GoglBurbach, G.G.BurbachFiedler, H.-L.H.-L.FiedlerVerbeck, M.M.VerbeckZimmermann, C.C.Zimmermann2022-03-032022-03-031997https://publica.fraunhofer.de/handle/publica/19127710.1109/55.641439A thin-film SIMOX technology has been used for fabrication of a single-polysilicon EEPROM cell suitable for high-temperature applications. The two transistor cell is composed of a select transistor and a floating gate transistor with 10 nm tunnel oxide. The EEPROM process extension requires only a few steps suitable for embedded memory applications with low cost and turn around time. Endurance and data retention characteristics of the SIMOX EEPROM cell are presented for a temperature of 250 øC. The problem of temperature induced leakage currents in the select transistor at elevated temperatures is investigated.endata retentionEEPROMFestwertspeicherfloating gateFowler-Nordheimhigh-temperatureHochtemperaturtechnikselect transistor enduranceSIMOXTunneleffekt621journal article