Lanza, M.M.LanzaPorti, M.M.PortiNafria, M.M.NafriaAymerich, X.X.AymerichBenstetter, G.G.BenstetterLodermeier, E.E.LodermeierRanzinger, H.H.RanzingerJaschke, G.G.JaschkeTeichert, S.S.TeichertWilde, L.L.WildeMichalowski, P.P.Michalowski2022-03-112022-03-112009https://publica.fraunhofer.de/handle/publica/36247510.1016/j.mee.2009.03.0202-s2.0-67349204326In this work, Atomic Force Microscopy (AFM) based techniques are used to study, at the nanoscale, the dependence of the electrical properties of Al2O3 stacks for Flash memories on the percent of diffused Silicon and material crystallization after being annealed at different temperatures.en620621conference paper