Under CopyrightKrieg, KatrinKatrinKriegMack, SebastianSebastianMackZimmer, MartinMartinZimmerVollmer, JanJanVollmerDannenberg, TobiasTobiasDannenbergBrunner, DamianDamianBrunner2024-01-042024-01-042023Note-ID: 00008BA6https://publica.fraunhofer.de/handle/publica/458431https://doi.org/10.24406/publica-238210.4229/EUPVSEC2023/1AO.5.410.24406/publica-2382This work gives results on wet chemical parasitical polysilicon removal for tunnel oxide passivated contact (TOPCon) n-type silicon solar cells. The poly-Si removal is important to fabricate TOPCon cells with low reverse bias junction leakage current density (jrev,2). TOPCon solar cells with in-situ n-doped LPCVD and PECVD poly-Si layers were fabricated with wet chemical inline and wet chemical batch poly-Si removal processes. Our results show that a wet chemical alkaline batch removal for parasitical PECVD poly-Si is possible using the anneal oxide from N2 anneal process to protect the functional poly-Si on rear. This batch process led to an efficiency of 23.4% solar cell with in-situ doped PECVD poly-Si.enPECVDLPCVDBatch Cluster EtchingInline EtchingWet Chemicalconference paper