Lao, Z.Z.LaoHurm, V.V.HurmThiede, A.A.ThiedeBerroth, M.M.BerrothLudwig, M.M.LudwigLienhart, H.H.LienhartSchlechtweg, M.M.SchlechtwegHornung, J.J.HornungBronner, WolfgangWolfgangBronnerKöhler, KlausKlausKöhlerHülsmann, A.A.HülsmannKaufel, G.G.KaufelJakobus, T.T.Jakobus2022-03-032022-03-031998https://publica.fraunhofer.de/handle/publica/192979Two integrated circuits, a modulator driver and a photoreceiver integrating a metal-semiconductor-metal (MSM) photodetector, a differential transimpedance amplifier and two limiting amplifier stages for high-speed optical-fiber links are presented. The IC's were manufactured in a 0.2 mu m gate-length AlGaAs/GaAs-high-electron mobility transistor (HEMT) technology with a f(T) of 60 GHz. The modulator driver IC operates up to 25 Gb/s with an output voltage swing of 3.3 V(p-p) at each output. The 1.3-1.55 mu m wavelength monolithically integrated photoreceiver optoelectronic integrated circuit (OEIC) has a bandwidth of 17 GHz with a high transimpedance gain of 12 k ohm. Eye diagrams are demonstrated at 20 Gb/s with an output voltage of 1 V(p-p).enBegrenzerverstärkerHEMT technologylangwelliglimiting amplifierlong wavelengthMSM photodetectorOEICPhotoempfängerphotoreceiver621667535journal article