70 dB signal-to-noise ratio at 3 THz using locally doped InGaAs-based photoconductive detectors

Kohlhaas, R.B.R.B.KohlhaasNellen, S.S.NellenLiebermeister, L.L.LiebermeisterGlobisch, B.B.GlobischSchell, M.M.Schell2022-03-132022-03-132017https://publica.fraunhofer.de/handle/publica/40088810.1109/IRMMW-THz.2017.8067021This article investigates photoconductive THz detectors based on low-temperature-grown InGaAs/InAlAs with a localized Be doping profile. With this approach we address the inherent trade-off between ultrafast carrier trapping and high mobility in photoconductors. The processed detector antennas show an excellent performance and feature a detection bandwidth of more than 6 THz and a signal-to-noise ratio of 70 dB at 3 THz.en62170 dB signal-to-noise ratio at 3 THz using locally doped InGaAs-based photoconductive detectorsconference paper