Hopfe, V.V.HopfeRogler, D.D.RoglerMäder, G.G.MäderDani, I.I.DaniLandes, K.K.LandesTheophile, E.E.TheophileDzulko, M.M.DzulkoRohrer, C.C.RohrerReichhold, C.C.Reichhold2022-03-032022-03-032005https://publica.fraunhofer.de/handle/publica/20959210.1002/cvde.200406343A new type of DC-powered plasma source (LARGE) was developed and evaluated for continuous plasma-enhanced (PE) CVD under atmospheric pressure. The linear extended emanating plasma sheet was scaled-up to various working widths with the result that a half meter range has already been achieved. A CVD reactor was designed for continuous deposition of non-oxide materials. The reactor operates in a remote atmospheric pressure (AP) PECVD configuration with typical deposition rates of 5-50 nm s-1 (static) and 0.1-1.0 nm m s-1 (dynamic).The potential application range of the ArcJet-CVD technology was evaluated by screening studies with various substrates, (stainless steel, glass, silicon wafers) and coating materials (silica, carbon, silicon nitride). In-situ process characterization has been provided by both optical emission and Fourier transform infrared (FTIR) spectroscopy. A range of atomic and molecular intermediates, precursor fragments, and reaction products were identified, leading to the conclusion that a complete conversion of the element-organic precursors into an inorganic layer takes place.en621671548journal article