Stock, G.G.StockBollmann, D.D.BollmannBuchner, R.R.BuchnerNeumayer, G.G.NeumayerHaberger, K.K.Haberger2022-03-032022-03-031990https://publica.fraunhofer.de/handle/publica/17927110.1016/0169-4332(90)90168-YA CO sub 2 high-power laser was used for laser-driven boron and phosphorus diffusion in solid phase from silicate glass layers into silicon. This technique allows the formation of shallow (< 0.1mym) and flat profile junctions with a concentration of about 10 high 19 cm high -3. SIMS, SEM and spreading resistance methods were used for sample characterization.endiffusiondopingDotierungflachflatHalbleiterlaserOberflächep-n junctionp-n Übergangpn-junctionpn-Übergangsemiconductorshallowsilicate glasssiliconSiliziumsurface669journal article