Levet-set-based inverse lithography under random field shape uncertainty in a vector Hopkins imaging model

Wu, X.X.WuFühner, T.T.FühnerErdmann, A.A.ErdmannLam, E.Y.E.Y.Lam2022-03-142022-03-142017https://publica.fraunhofer.de/handle/publica/40189510.1364/COSI.2017.CW1B.42-s2.0-85026318981This paper describes an approach to incorporate a random field uncertainty in level-set-based inverse lithography in a vector imaging model. It is expected that the approach can improve the robustness of the photomask evaluated by MEEF.en670620530Levet-set-based inverse lithography under random field shape uncertainty in a vector Hopkins imaging modelconference paper