Passenberg, W.W.PassenbergSchlaak, W.W.SchlaakUmbach, A.A.Umbach2022-03-092022-03-091996https://publica.fraunhofer.de/handle/publica/327342MBE regrowth of InP based device layers on planar and patterned In(GaAs)P structures was studied in the framework of monolithic integration of an optoelectronic receiver comprising HEMTs and a waveguide integrated photodiode. Appropriate surface cleaning prior to regrowth proved to be essential for obtaining low contamination levels and surfaces of high morphological quality. Different wet chemical etchants and surface oxidation using UV/ozone exposure have been compared. In this context MBE regrowth over etched steps was also addressed.enetchinggallium arsenideHEMT integrated circuitsiii-v semiconductorsindium compoundsintegrated optoelectronicsmolecular beam epitaxial growthoxidationphotodiodessemiconductor growthsurface cleaninginGaAs mbe regrowthpatterned in(GaAs)p layersplanar in(GaAs)p layersmonolithic integrationInP based device layersoptoelectronic receiverHEMTwaveguide integrated photodiodelow contamination levelshigh surface morphological qualitywet chemical etchantssurface oxidationuv/ozone exposureetched stepsmolecular beam epitaxyinpinGaAspinGaAs621conference paper