Brose, S.S.BroseDanylyuk, S.S.DanylyukJuschkin, L.L.JuschkinDittberner, C.C.DittbernerBergmann, K.K.BergmannMoers, J.J.MoersPanaitov, G.G.PanaitovTrellenkamp, S.S.TrellenkampLoosen, P.P.LoosenGrützmacher, D.D.Grützmacher2022-03-042022-03-042012https://publica.fraunhofer.de/handle/publica/22859610.1016/j.tsf.2012.03.036Lithography and patterning on a nanometre scale with extreme ultraviolet (EUV) and soft X-ray radiation allow creation of high resolution, high density patterns independent of a substrate type. To realize the full potential of this method, especially for EUV proximity printing and interference lithography, a reliable technology for manufacturing of the transmission masks and gratings should be available. In this paper we present a development of broadband amplitude transmission masks and gratings for extreme ultraviolet and soft X-ray lithography based on free-standing niobium membranes. In comparison with a standard silicon nitride based technology the transmission masks demonstrate high contrast not only for in-band EUV (13.5 nm) radiation but also for wavelengths below Si L-absorption edge (12.4 nm). The masks and filters with free standing areas up to 1000 × 1000 m 2 and 100 nm to 300 nm membrane thicknesses are shown. Electron beam structuring of an absorber layer with dense line and dot patterns with sub-50 nm structures is demonstrated. Diffractive and filtering properties of obtained structures are examined with EUV radiation from a gas discharge plasma source.en621541journal article