Boiko, D.L.D.L.BoikoZeng, X.X.ZengWeig, T.T.WeigSchwarz, U.T.U.T.SchwarzSulmoni, L.L.SulmoniLamy, J.-M.J.-M.LamyGrandjean, N.N.Grandjean2022-03-122022-03-122013https://publica.fraunhofer.de/handle/publica/38335110.1109/CLEOE-IQEC.2013.6801029A semiconductor laser diode producing ultra-short optical pulses in the blue-violet range will find numerous applications ranging from next-generation 3D optical data storage devices to bio-medical diagnostic methods. In this communication we report generation of solitary pulses of the width below 1.1 ps from a tandem-cavity InGaN/InGaN laser diodes operating in 415-425 nm wavelength range. Solitary pulses are produced in the pulse-on-demand mode within narrow transient region between amplified spontaneous emission (ASE) and Q-switched lasing (LAS). The pulses exhibit large jitter. This regime is achieved when high negative bias -20 V was applied to the central section of the device (saturable electroabsorber) while to end sections were pumped with 1 A current pulses.enconference paper