Correction to "Broadband Terahertz Power Detectors Based on 90-nm Silicon CMOS Transistors with Flat Responsivity Up to 2.2 THz" [vol 39, pg 1413, 2018]

Ikamas, K.K.IkamasCibiraite, D.D.CibiraiteLisauskas, A.A.LisauskasBauer, M.M.BauerKrozer, V.V.KrozerRoskos, H.G.H.G.Roskos2022-03-052022-03-052019https://publica.fraunhofer.de/handle/publica/25827210.1109/LED.2018.2889431In the above paper [1] , the footnote acknowledges financial support received from the Research Council of Lithuania with wrong project number. The statement ""This work was supported by the Research Council of Lithuania under contract TAP LZ-06/2015, EL"" should be read as ""This work was supported by the Research Council of Lithuania under contract LAT-04/2016, EL"".en003621006519Correction to "Broadband Terahertz Power Detectors Based on 90-nm Silicon CMOS Transistors with Flat Responsivity Up to 2.2 THz" [vol 39, pg 1413, 2018]journal article