Hahn, H.H.HahnBenkhelifa, FouadFouadBenkhelifaAmbacher, OliverOliverAmbacherAlam, A.A.AlamHeuken, M.M.HeukenYacoub, H.H.YacoubNoculak, A.A.NoculakKalisch, H.H.KalischVescan, A.A.Vescan2022-03-042022-03-042013https://publica.fraunhofer.de/handle/publica/23326610.7567/JJAP.52.090204GaN-on-Si transistors are regarded as a candidate for future power-switching applications. Beside the necessity to achieve enhancement mode behavior, on-resistance and maximum gate voltage are still limited for GaN-based transistors on Si substrate. Here, an enhancement mode metal insulator semiconductor heterostructure field effect transistor on Si substrate with record on-current of 1.35A/mm and threshold voltage of +0.82 V is demonstrated. The corresponding gate current is still well below 1mA/mm at 6.5 V gate voltage. By comparison of measured and simulated CV curves, the density of interface states introduced by the insulator is shown to be quasi-independent on etch damage and/or barrier material.en667530journal article