Steglich, MartinMartinSteglichLehr, DennisDennisLehrRatzsch, StephanStephanRatzschKäsebier, ThomasThomasKäsebierSchrempel, FrankFrankSchrempelKley, Ernst-BernhardErnst-BernhardKleyTünnermann, AndreasAndreasTünnermann2022-03-042022-03-042014https://publica.fraunhofer.de/handle/publica/23557010.1002/lpor.201300142An ultra-black (A > 99%) broadband absorber concept on the basis of a needle-like silicon nanostructure called Black Silicon is proposed. The absorber comprises Black Silicon established by inductively coupled plasma reactive ion etching (ICP-RIE) on a highly doped, degenerated silicon substrate. Improved absorbers also incorporate an additional oxide capping layer on the nanostructures and reach an absorptance of A > 99.5% in the range of 350 to 2000 nm and A ? 99.8% between 1000 and 1250 nm. Fabrication of the absorbers is consistent with CMOS standards and requires no lithography.enlight absorberblack siliconatomic layer depositionICP-RIEspectroscopysilicon nanostructures621journal article