65 GHz bandwidth optical receiver combining a flip-chip mounted waveguide photodiode and GaAs-based HEMT distributed amplifier

Leich, M.M.LeichHurm, V.V.HurmSohn, J.J.SohnFeltgen, T.T.FeltgenBronner, WolfgangWolfgangBronnerKöhler, KlausKlausKöhlerWalcher, H.H.WalcherRosenzweig, JosefJosefRosenzweigSchlechtweg, M.M.Schlechtweg2022-03-032022-03-032002https://publica.fraunhofer.de/handle/publica/20213310.1049/el:200210972-s2.0-0037028296Hybrid integrated photoreceivers with up to 65 GHz bandwidth are presented. They consist of GalnAs/AlGalnAs/AlInAs multimode waveguide photodiodes, flip-chip bonded on GaAs-based pseudomorphic HEMT distributed amplifiers with a very low input impedance. The overall O/E conversion gain is as high as 120 V/W at 1.55 µm wavelength.enphotoreceiverPhotoempfängerwaveguide photodiodeWellenleiterphotodiodedistributed amplifierverteilter VerstärkerTWAoptical communicationoptische Datenübertragung62166738465 GHz bandwidth optical receiver combining a flip-chip mounted waveguide photodiode and GaAs-based HEMT distributed amplifierAus einer Wellenleiter-Photodiode, sowie einem in GaAs-HEMT-Technologie realisiertem verteilten Verstärker mittels Flip-Chip-Technologie hergestelltem Photoempfänger mit 65 GHz Bandbreitejournal article