Under CopyrightKocher, MatthiasMatthiasKocherYao, BotengBotengYaoWeisse, JuliettaJuliettaWeisseRommel, MathiasMathiasRommelXu, ZongweiZongweiXuErlbacher, TobiasTobiasErlbacherBauer, AntonAntonBauer2022-03-1412.10.20182018https://publica.fraunhofer.de/handle/publica/40177910.24406/publica-fhg-401779en670620530Determination of compensation ratios of Al-implanted 4H-SiC by TCAD modelling of TLM measurementsposter