Buchner, R.R.BuchnerHaberger, K.K.HabergerSeitz, S.S.SeitzWeber, J.J.WeberWel, W. van derW. van derWelSeegebrecht, P.P.Seegebrecht2022-03-082022-03-081989https://publica.fraunhofer.de/handle/publica/316594Ar laser recrystallization of polycrystalline silicon-on-insulator layers for 3-dimensional integration is discussed. Attention is given to geometry and composition of anti-reflection stripes as well as to recrystallization conditions preventing substrate damage. Functioning devices both in the substrate and in the top layer have been fabricated.en3D-IntegrationentrainmentKristallisationlaserPolysiliziumSOIsubstrate damageSubstratschadenconference paper