Theurer, M.M.TheurerZhang, H.Y.H.Y.ZhangWang, Y.Y.WangChen, W.W.ChenChen, L.L.ChenZengTroppenz, U.U.TroppenzPrzyrembel, G.G.PrzyrembelSigmund, A.A.SigmundMöhrle, M.M.MöhrleSchell, M.M.Schell2022-03-052022-03-052017https://publica.fraunhofer.de/handle/publica/25116710.1109/JLT.2016.2597962In this paper, we present a novel device which comprises a DFB laser with electroabsorption modulators integrated on both sides. This integrated chip provides two independently modulated optical outputs from a single laser source and thus cuts the required number of chips for multilane applications in half. Both outputs can be simultaneously operated with 56 Gb/s NRZ leading to 112 Gb/s from a single chip. The performance of the chip is further tested in an optical PAM4 generation experiment. The two NRZ modulated outputs are combined with a polarization combiner to generate an optical PAM4 signal which on the receiver side is measured with a polarization insensitive photodetector.en535journal article