Under CopyrightPolzin, Jana-IsabelleJana-IsabellePolzinFeldmann, FrankFrankFeldmannSteinhauser, BerndBerndSteinhauserHermle, MartinMartinHermleGlunz, Stefan W.Stefan W.Glunz2022-03-147.3.20202019https://publica.fraunhofer.de/handle/publica/40694810.1063/1.5123843This paper discusses how differently grown ultra-thin interfacial oxide of poly-Si based passivating contacts correspond to high-temperature annealing as well as its sensitivity to hydrogenation. It will be shown on symmetrical lifetime samples that tunnel oxide passivating contacts (TOPCon) featuring thermally grown interfacial oxide layer allow a higher optimum annealing temperature than those with thin wet-chemically grown oxides. These TOPCon structures can yield an excellent passivation quality with up to 741 mV iVoc and 88% iFF. Moreover, TOPCon samples annealed at low temperatures benefit more strongly from a subsequent hydrogenation process.enPhotovoltaikSilicium-PhotovoltaikHerstellung und Analyse von hocheffizienten Solarzellen621697conference paper