Löw, H.H.LöwSulz, G.G.SulzLacher, M.M.LacherKühner, G.G.KühnerUptmoor, G.G.UptmoorReiter, H.H.ReiterSteiner, K.K.Steiner2022-03-032022-03-031992https://publica.fraunhofer.de/handle/publica/18211610.1016/0925-4005(92)80219-NThin-film In-doped V-catalysed SnO2 gas sensors are discussed and compared with Pt-catalysed In-doped or undoped SnO2 gas sensors. The In acceptors are implanted, while the catalysts are directly evaporated onto the active sensor layer. The V/In catalyst/dopant combination leads to thin-film sensors highly sensitive to NO2, while nearly no cross sensitivity to CO, CO2, H2 and CH4 is detectable. The maximum conductivity change of the V-catalyst In-doped SnO2 sensor in NO2-enriched synthetic air occurs at about 200 degree C.enDünnschichtgas sensorgassensorimplantationindium dopantIndium-Dotierungp-Dotierungp-type dopedthin filmstin dioxidevanadium catalystVanadium-KatalysatorZinndioxid621541journal article