Reliability and degradation of metal-oxide-semiconductor capacitors on 4H- and 6H-silicon carbide

Treu, M.M.TreuSchorner, R.R.SchornerFriedrichs, P.P.FriedrichsRupp, R.R.RuppWiedenhofer, A.A.WiedenhoferStephani, D.D.StephaniRyssel, H.H.Ryssel2022-03-092022-03-092000https://publica.fraunhofer.de/handle/publica/334690en670620530Reliability and degradation of metal-oxide-semiconductor capacitors on 4H- and 6H-silicon carbideconference paper