Hellinger, CarstenCarstenHellingerRusch, OlegOlegRuschRommel, MathiasMathiasRommelBauer, A.J.A.J.BauerErlbacher, TobiasTobiasErlbacher2022-03-142022-03-142020https://publica.fraunhofer.de/handle/publica/40852210.4028/www.scientific.net/MSF.1004.718In this work, pulsed-laser-based tempering was applied for post-implant annealing of n-type N-doped 4H-SiC in order to electrically activate the dopants and to rebuild the crystal structure. The annealing was performed by a frequency-tripled Nd:YVO4 laser with a pulse duration of 60 ns. To evaluate the effects of post-implant annealing, JBS diodes were electrically characterized. The results were compared with implanted, not post-annealed JBS diodes. The electrical measurements showed a significant on-state voltage drop of 40 mV at 6 A for post-implant laser annealed diodes compared to not post-implant annealed diodes.enlaser annealingimplant activationohmic contact670620530conference paper