Baeyens, Y.Y.BaeyensZanden, K. van derK. van derZandenSchreurs, D.D.SchreursNauwelaers, B.B.NauwelaersHove, M. vanM. vanHoveRossum, M. vanM. vanRossumBraunstein, J.J.Braunstein2022-03-092022-03-091997https://publica.fraunhofer.de/handle/publica/328033The performance of InP-based dual-gate HEMTs in a cascode configuration is demonstrated by the realization of a number of coplanar amplifiers. Three single-stage dual-gate amplifiers with a stable insertion gain of 16.4, 12.4 and 7.5 dB at respectively 58.5, 93.5 and 111 GHz are successfully realized. For a distributed amplifier using meandered coplanar lines a gain of 8.8 dB with a 3-dB bandwidth of 97 GHz is obtained.enHEMTintegrated circuitintegrierte SchaltungMMIC621667conference paper