Thermal stability investigations of PECVD Al2O3 films discussing a possibility of improving surface passivation by re-hydrogenation after high temperature processes

Kafle, BishalBishalKafleKühnhold-Pospischil, SaskiaSaskiaKühnhold-PospischilBeyer, W.W.BeyerLindekugel, StefanStefanLindekugelSaint-Cast, PierrePierreSaint-CastHofmann, MarcMarcHofmannRentsch, JochenJochenRentsch2022-03-124.5.20132012https://publica.fraunhofer.de/handle/publica/37847010.24406/publica-r-37847010.4229/27thEUPVSEC2012-2CV.5.55This work investigates the changing passivation behavior of Al2O3 after different thermal treatments based on carrier lifetime ( eff), interface defect density (Dit) and fixed charge density (Qtot) measurements. A concept of diffusing H species into the dehydrogenated Al2O3 films, termed as re-hydrogenation, has also been investigated for the PECVD deposited Al2O3 samples. Use of a-SiNx:H as a capping layer as in Al2O3/a-SiNx:H stack provides a better thermal stability for a thin PECVD Al2O3 layer. A comparison between single Al2O3 layer and Al2O3/ a-SiNx:H passivation stack after high temperature processes has been also performed in this work.enPV Produktionstechnologie und QualitätssicherungSilicium-PhotovoltaikProduktionsanlagen und Prozessentwicklung621697Thermal stability investigations of PECVD Al2O3 films discussing a possibility of improving surface passivation by re-hydrogenation after high temperature processesconference paper