Sellin, R.L.R.L.SellinRibbat, C.C.RibbatBimberg, D.D.BimbergRinner, F.F.RinnerKonstanzer, HelmerHelmerKonstanzerKelemen, M.T.M.T.KelemenMikulla, MichaelMichaelMikulla2022-03-032022-03-032002https://publica.fraunhofer.de/handle/publica/20204810.1049/el:200206022-s2.0-00366854594.7 W continuous-wave (CW) and 11.7 W quasi-CW output power have been demonstrated for laser diodes based on six-fold stacks of InGaAs/GaAs quantum dots. Lifetimes beyond 3000 h at 1.0 and 1.5 W output power and 50degreesC heatsink temperature were measured. The output power is limited by catastrophic optical mirror damage occurring at 19.5 MW/cm(2) on the front facet.enGaAsIII-V semiconductorIII-V Halbleiterindium compoundsIndium-VerbindungMOCVDquantum-well laserQuantentopflaserreliabilityZuverlässigkeitquantum-dotQuantenpunkteepitaxyEpitaxie621667384journal article