Pichler, P.P.PichlerBurenkov, A.A.BurenkovLerch, W.W.LerchLorenz, J.J.LorenzPaul, S.S.PaulNiess, J.J.NiessNényei, Z.Z.NényeiGelpey, J.J.GelpeyMcCoy, S.S.McCoyWindl, W.W.WindlGiles, L.F.L.F.Giles2022-03-102022-03-102006https://publica.fraunhofer.de/handle/publica/35229210.4028/3-908451-36-1.510The continuous scaling of electron devices places strong demands on device design and simulation. The currently prevailing bulk transistors as well as future designs based on thin silicon layers all require a tight control of the dopant distribution. For process simulation, especially the correct prediction of boron diffusion and activation was always a problem. The paper describes the model developed for boron implanted into crystalline silicon and shows applications to hot-shield annealing and flash-assisted rapid thermal processing.enCMOS technologytransient diffusiontransient activationpattern effecthot-shield annealingflash annealingnumerical modelingprocess simulation670620530conference paper