Schermer, J.J.SchermerPichler, P.P.PichlerZechner, C.C.ZechnerLerch, W.W.LerchPaul, S.S.Paul2022-03-102022-03-102007https://publica.fraunhofer.de/handle/publica/35494010.1109/ESSDERC.2007.4430948The physical concepts developed to describe the transient activation of boron during post-implantation annealing are based on the concurrent formation of complexes comprising boron atoms and self-interstitials. A complete implementation into TCAD software leads to a high number of equations to be solved which is often inadmissible for multi-dimensional simulations. In this work, a minimum number of such complexes is taken into considerations. We show that such a model is nevertheless able to reproduce a large variety of implant and annealing conditions.enboronclusteringsiliconBIC670620530conference paper