Scheibenzuber, W.W.ScheibenzuberSchwarz, U.T.U.T.Schwarz2022-03-042022-03-042011https://publica.fraunhofer.de/handle/publica/22429910.1002/pssb.2010462622-s2.0-79951736700We investigate the influence of polarization switching on the optical gain of semipolar InGaN quantum wells (QWs) depending on indium content and charge carrier concentration using self-consistent 6\'016 k\'02p-band structure calculations. The semipolar planes considered here are the (1122)- and the (2021)-plane. In contrast to the (2021)-plane, the dominant polarization of the optical gain in aQWon the (1122)-plane can depend on both the indium content and the charge carrier concentration, as reported from experiments. These effects are explained by a detailed analysis of the wave function composition of the topmost valence bands in a semipolar QW.enGaNInGaNsemiconductor lasersemipolar planesquantum well667530journal article