Baeumler, MartinaMartinaBaeumlerFuchs, F.F.FuchsKaufmann, U.U.Kaufmann2022-03-022022-03-021989https://publica.fraunhofer.de/handle/publica/17753310.1103/PhysRevB.40.8072Photoelectron-paramagnetic-resonance and near-infrared-absorption measurements on antimony-doped GaAs:Sb are reported. The results provide convincing evidence that the E sub c - 0.48 eV level in this material, previously inferred from Hall-effect measurements, is the (O/+) donor level of the Sb sub Ga heteroantisite defect.enESRhetero-antisite-defectSI GaAs621667530journal article