Al Mustafa, N.N.Al MustafaGranzner, R.R.GranznerPolyakov, Vladimir M.Vladimir M.PolyakovRacko, J.J.RackoMikolasek, M.M.MikolasekBreza, J.J.BrezaSchwierz, F.F.Schwierz2022-03-042022-03-042012https://publica.fraunhofer.de/handle/publica/22861710.1063/1.3688219The formation of two-dimensional carrier gases in gated GaN/AlGaN/GaN heterostructures is investigated theoretically. It is shown that under certain conditions a two-dimensional hole gas at the upper GaN/AlGaN interface can be formed in addition to the two-dimensional electron gas at the lower AlGaN/GaN interface. For the calculations, a Schrdinger-Poisson solver and a simple analytical model developed in the present work are used. Conditions for the formation of a two-dimensional hole gas are elaborated. It is shown that once a two-dimensional hole gas is created, it shields the coexisting two-dimensional electron gas which will result in a diminishing effect of the gate voltage on the two-dimensional electron gas.en667530journal article