Under CopyrightBöttner, H.H.BöttnerNurnus, J.J.NurnusGavrikov, A.A.GavrikovKühner, G.G.KühnerJägle, M.M.JägleKünzel, C.C.KünzelEberhard, D.D.EberhardPlescher, G.G.PlescherSchubert, A.A.SchubertSchlereth, K.-H.K.-H.Schlereth2022-03-0314.11.20082004https://publica.fraunhofer.de/handle/publica/20651710.1109/JMEMS.2004.82874010.24406/publica-r-2065172-s2.0-3142697662This paper describes the first thermoelectric devices based on the V-VI-compounds Bi/sub 2/Te/sub 3/ and (Bi,Sb)/sub 2/Te/sub 3/ which can be manufactured by means of regular thin film technology in combination with microsystem technology. Fabrication concept, material deposition for some 10-/spl mu/m-thick layers and the properties of the deposited thermoelectric materials will be reported. First device properties for Peltier-coolers and thermogenerators will be shown as well as investigations on long term and cycling stability. Data on metal/semiconductor contact resistance were extracted form device data. Device characteristics like response time for a Peltier-cooler and power output for a thermogenerator will be compared to commercial devices.en621journal article