Wagner, J.J.WagnerFuchs, F.F.FuchsHerres, N.N.HerresSchmitz, J.J.SchmitzKoidl, P.P.Koidl2022-03-032022-03-031995https://publica.fraunhofer.de/handle/publica/186390InAs/Ga(l-x)In(x)Sb superlattices (SLs) are of current interest because of their potential application in infrared optoelectronic devices. We present a detailed study of the structural and optical properties of InAs/GaSb SLs with either InSb-like or GaAs-like interfaces (IFs). The SL structures were grown by molecular-beam epitaxy on top of a strain- relaxed GaSb buffer layer on (100) GaAs substrates. Special emphasis is laid on the dependence of the SL properties on the type of IF bonds formed. SIA with InSb-like IFs were found to have superior structural and luminescence properties, which allowed us to fabricate InAs/GaSb SL p-i-n diodes with InSb-like IFs showing photovoltaic response and electrically pumped emission up to room-temperature.enInAs/GaSb superlatticesInAs/Sb-ÜbergitterIR-detectorIR-Detektoroptical propertiesoptische Eigenschaftstructural characterizationstrukturelle Charakterisierung621667book article