Min, B.B.MinWagner, HannesHannesWagnerDastgheib-Shirazi, A.A.Dastgheib-ShiraziKimmerle, AchimAchimKimmerleKurz, H.H.KurzAltermatt, Pietro P.Pietro P.Altermatt2022-03-042022-03-042014https://publica.fraunhofer.de/handle/publica/23694010.1002/pssr.201409138The measured saturation current density J(0e) of heavily phosphorus-doped emitters of crystalline Si solar cells is analysed by means of sophisticated numerical device modelling. It is concluded that Shockley-Read-Hall (SRH) recombination exceeds Auger recombination significantly; it is caused by inactive phosphorus. This explains the large discrepancies be-tween measured and simulated J(0e) values, observed persistently over the last two decades in industrially fabricated Si solar cells. As a consequence, the heavily phosphorus-diffused emitters still bear a significant potential to contribute to higher Si solar cell efficiency levels, if the amount of inactive phosphorus can be reduced.enPV Produktionstechnologie und QualitätssicherungSilicium-PhotovoltaikCharakterisierung von Prozess- und Silicium-MaterialienHerstellung und Analyse von hocheffizienten SolarzellenPilotherstellung von industrienahen SolarzellenEmitterdopingRecombinationSiliconcells530journal article