Zwicknagl, P.P.ZwicknaglSchaper, U.U.SchaperSchleicher, L.L.SchleicherSiweris, H.H.SiwerisBachem, K.H.K.H.BachemLauterbach, T.T.LauterbachPletschen, WilfriedWilfriedPletschen2022-03-032022-03-031992https://publica.fraunhofer.de/handle/publica/18144410.1049/el:19920203Tunnelling emitter bipolar transistors (TEBTs) with a 1O nm GaInP layer between emitter and base acting as a hole repelling potential barrier in the valence band have been fabricated from MOCVD grown Gasub0x5Insub0x5P/GaAs layer structures. The carbon doped base layer (110nm, 6-5 x 10high19 cmhighminus3) exhibits a base sheet resistance of 100Omega/quadrat. DC and RF characterisation of a non-selfaligned GaAs asymmetric TEBT with fsubr bigger than 40 GHz and fsubmax bigger than 90 GHz are reported.encarbon dopingchemical vapour depositionGaInP/GaAsHBTKohlenstoffdotierungMOCVD621667384journal article