Seliuta, D.D.SeliutaSirmulis, E.E.SirmulisTamosiunas, V.V.TamosiunasBalakauskas, S.S.BalakauskasAsmontas, S.S.AsmontasSuziedelis, A.A.SuziedelisGradauskas, J.J.GradauskasValusis, G.G.ValusisLisauskas, A.A.LisauskasRoskos, H.G.H.G.RoskosKöhler, KlausKlausKöhler2022-03-032022-03-032004https://publica.fraunhofer.de/handle/publica/20619310.1049/el:20040412A diode structure to detect THz/subTHz radiation based on an MBE-grown modulation-doped GaAs/Al(0.25)Ga(0.75)As structure is proposed. Devices have an asymmetrically-shaped geometrical from in the plane of the structure and are fabricated as mesas of 2 µm depth by wet etching. The incident terahertz/sub-terahertz radiation induces a voltage signal over the ends of the sample. Detection by non-uniform carrier heating effects under external illumination is explained and the devices operation from 10 GHz up to 2.52 THz at room temperature is demonstrated.enIII-V semiconductorIII-V HalbleiterheterostructureHeterostrukturterahertzspectroscopySpektroskopie621667384journal article