Leuther, ArnulfArnulfLeutherTessmann, AxelAxelTessmannMassler, HermannHermannMasslerLösch, R.R.LöschSchlechtweg, M.M.SchlechtwegMikulla, MichaelMichaelMikullaAmbacher, OliverOliverAmbacher2022-03-102022-03-102008https://publica.fraunhofer.de/handle/publica/35916810.1109/ICIPRM.2008.4702910A metamorphic high electron mobility transistor (mHEMT) technology featuring 35 nm gate length has been developed. The optimized MBE grown layer sequence has a channel mobility and a channel electron density as high as 9800 cm2/Vs and 6.1x10(exp 12) cm-2, respectively. To enable a maximum extrinsic transconductance g(ind m, max) of 2500 mS/mm the source resistance has been reduced to 0.1 ohm mm. An f(ind t) of 515 GHz was achieved for a 2 x 10 µm device. Based on this advanced 35 nm mHEMT technology very compact single-stage H-band amplifiers circuits have been realized demonstrating a high small-signal gain of more than 7 dB at 270 GHz.enMHEMTInGaAs/InAlAs heterostructureInGaAs/InAlAs HeterostrukturS-MMICsubmillimeter-wave monolithic integrated circuit667conference paper