Tackeuchi, A.A.TackeuchiHeberle, A.P.A.P.HeberleRühle, W.W.W.W.RühleKöhler, KlausKlausKöhler2022-03-032022-03-031995https://publica.fraunhofer.de/handle/publica/18585910.1143/JJAP.34.L543Tunneling in asymmetric double quantum wells is studied using time-resolved hotoluminescence. The photoluminescence lineshape and peak position of the narrow quantum well are strongly influenced by band-gap renormalization caused by the tunneling carriers. Tunneling is quenched in a field regime of Ï 10 kV/cm around the groundstate resonance due to excitonic effects.enIII-V HalbleiterIII-V semiconductorsquantum wellstime-resolved photoluminescencezeitaufgelöste Photolumineszenz621667530journal article