Heinz, FelixFelixHeinzLeuther, ArnulfArnulfLeutherThome, FabianFabianThome2024-08-132024-08-132024https://publica.fraunhofer.de/handle/publica/47313610.1109/IMS40175.2024.10600410This paper reports on broadband low-noise amplifier (LNA) microwave monolithic integrated circuits (MMICs) realized in InGaAs high-electron-mobility transistor technology on GaAs and Si substrates targeting frequencies that extend the W-band (75-110GHz). InGaAs HEMT LNA MMICs on silicon substrate offer new options to hetero-integrate III/V semiconductor RF-performance with functionalities available in CMOS for applications such as multi-channel receivers. The use of front-side thin-film microstrip lines for matching allows for a feasible HEMT technology comparison even with different substrates. LNA 1 is realized in 35 nm metamorphic HEMT technology on GaAs substrate and LNA 2 is realized in a 20 nm InGaAs HEMT-on-insulator technology on Si substrate. Both circuits use the same passive networks for a fair comparison. LNA 1 achieves an average small-signal gain of 33.2 dB between 66-114 GHz with an average noise temperature of 189 K (2.2 dB) in W-band. LNA 2 on silicon substrate achieves 32.6 dB small-signal gain on average between 66-114 GHz with 218 K (2.4 dB) average input noise in W-band.enHigh-electron-mobility transistors (HEMTs)InGaAs-on-insulator (InGaAs-OI)low-noise amplifiers (LNAs)microwave monolithic integrated circuits (MMICs)millimeter-wave (mmW)siliconE-bandW-bandconference paper