Basler, MichaelMichaelBaslerReiner, RichardRichardReinerGrieshaber, DanielDanielGrieshaberBenkhelifa, FouadFouadBenkhelifaMüller, StefanStefanMüllerMönch, StefanStefanMönch2025-06-132025-06-132025https://publica.fraunhofer.de/handle/publica/48860610.30420/566541089This work presents a highly-integrated GaN-based monolithic bidirectional switch (MBDS) with blocking voltage beyond 1200 V. A novel device structure for MBDS with intrinsically integrated free-wheeling diodes is introduced to improve the single-gate self-control characteristic for unidirectional current con duction. The MBDS is realized as a large-area device with an on-resistance of 178 mΩ in a GaN power IC, which includes additional peripherals such as two integrated gate drivers, current sense-FET, tem perature sensor, and substrate network to avoid back-gate effects. The GaN power IC is fabricated in a GaN-on-XISO technology and offers an advanced power device for various topologies.enMonolithicGaN-BasedBidirectional Switchconference paper