Dobos, K.K.DobosZimmer, G.G.Zimmer2022-03-022022-03-021985https://publica.fraunhofer.de/handle/publica/172885A multilayer PdO-Pd-gate metallization was investigated at a MOS-CO sensor. This type of metallization gives a high CO sensitivity and a good electrical control of the transistor. The performance of this sensor was investigated in comparison to a commercial SnO2 resistor CO sensor. (IMS)en621journal article