Optical stressing of 4H-SiC material and devices

Under CopyrightKallinger, BirgitBirgitKallingerKaminzky, DanielDanielKaminzkyBerwian, PatrickPatrickBerwianFriedrich, JochenJochenFriedrichOppel, SteffenSteffenOppel2022-03-1327.10.20172017https://publica.fraunhofer.de/handle/publica/39821410.24406/publica-fhg-398214enSilicon Carbide (SiC)defectbipolar degradationreliabilityphotoluminescenceimaging670620530Optical stressing of 4H-SiC material and devicesposter