Under CopyrightEvanschitzky, PeterPeterEvanschitzkyShao, FengFengShaoErdmann, AndreasAndreasErdmann2022-03-129.1.20132012https://publica.fraunhofer.de/handle/publica/37745110.1117/12.964282This paper presents the extension of the well-established rigorous electromagnetic field (EMF) solver Waveguide for the efficient and fully rigorous simulation of patterned extreme ultraviolet (EUV) masks with multilayer defects using a rigorously computed multilayer defect data base combined with on demand computed absorber structures. Typical computation times are in the range of seconds up to a few minutes. The new simulation approach will be presented. Selected simulation examples and a defect repair example demonstrate the functionality and the capability to perform fast, highly accurate and flexible EUV multilayer defect computations.enLithography simulationEUV multilayer defectsrigorous EMF simulationmultilayer defect data base670620530conference paper