Martin, G.H.G.H.MartinSeaford, K.L.K.L.SeafordSpencer, R.R.SpencerBraunstein, J.J.BraunsteinEastman, L.F.L.F.Eastman2022-03-092022-03-091995https://publica.fraunhofer.de/handle/publica/32471410.1109/CORNEL.1995.482428Using a simple analytical method followed by a computer program that solves the detailed quantum-mechanics, it is possible to design the optimum material structures for pseudomorphic MODFETs with full channels. Using a MODFET with a pseudomorphic graded channel, and atomic planar doped pseudomorphic barriers on both sides of the channel, it is possible to achieve record-breaking electron sheet densities in the channel without having carriers in the barrier (Double-Doped Double-Strained MODFET, 3D-SMODFET). This theory is used to predicted the optimum material designs (quantum-mechanical solution) for GaAs, InP and GaN based structures.enGaAsInPSMODFETs621667conference paper