Su, L.M.L.M.SuGrote, N.N.GroteBach, H.G.H.G.BachDoldissen, W.W.DoldissenRosenzweig, M.M.Rosenzweig2022-03-082022-03-081985https://publica.fraunhofer.de/handle/publica/3141042-s2.0-0022252625A CdO film was deposited on an InGaAs pn junction to form an npn bipolar transistor, which can be used also as a phototransistor. The high conductivity of CdO ( sigma =5*103/ Omega cm) reduces the emitter contact resistance and what a refractive index of n equivalent to 2.2 at 1.15 mu m wavelength the transparent film can serve as an antireflective window. The processing of the transistor is described. A current gain of hfe=10 (VCE=3V, Ic=1mA) and an emitter-collector breakdown voltage of VCEO=6V were obtained.enbipolar transistorscadmium compoundsgallium arsenideiii-v semiconductorsindium compoundsphototransistorssemiconductorwide gap CdO film emitternpn InGaAs bipolar transistorphototransistoremitter contact resistancerefractive indexantireflective windowcurrent gainemitter-collector breakdown voltagehfe-ic characteristicdark currenti-v characteristicspectral responses621conference paper