Albahrani, Sayed AliSayed AliAlbahraniMahajan, DhawalDhawalMahajanMönch, StefanStefanMönchReiner, RichardRichardReinerWaltereit, PatrickPatrickWaltereitSchwantuschke, DirkDirkSchwantuschkeKhandelwal, SourabhSourabhKhandelwal2022-03-062022-03-062019https://publica.fraunhofer.de/handle/publica/26067210.1109/TED.2019.2948828Measurement results of the terminal capacitances of a high-voltage power GaN high-electron-mobility transistor on a conductive-Si substrate are presented. These results show significant dependence of these capacitances on the substrate (or bulk/backside) voltage. In this article, we enhance the ASM-GaN compact model, which is a recently selected industry standard model for GaN devices, to account for this dependence. A detailed description of the modeling procedure is presented. Simulation results based on the enhanced model are in excellent agreement with measurement results. The model enables the design of advanced high-voltage GaN power ICs, such as half-bridges with drivers and logic, on a conductive Si-substrate, taking capacitive substrate coupling into account during simulations.enCapacitance-voltage (CV) characteristicscompact modelsgallium nitridehigh-electron-mobility transistor (HEMT)physics-based modelspower semiconductor devicesemiconductor device measurementsemiconductor device modelingsubstrates667621journal article