Under CopyrightKlüpfel, Fabian JohannesFabian JohannesKlüpfelBurenkov, AlexanderAlexanderBurenkovLorenz, JürgenJürgenLorenz2022-03-133.5.20192016https://publica.fraunhofer.de/handle/publica/39361810.24406/publica-r-39361810.1109/SISPAD.2016.7605191Electrical properties of silicon-dot-based single-electron memory devices were investigated using numerical simulation. For an accurate calculation of tridimensional electron wave functions in the dots and in the dot-isolation surrounding the nextnano++ simulator was employed. Tunneling rates between the dot and other electrodes were calculated using a post-processing of the electron-state-specific wave functions on the dots and in the electrical contacts. The charge state of the dots was evaluated using the master equation approach. The simulation model was verified by a comparison of simulated and measured charge state life times in a prototype of a single-electron memory device.enQuantum Dotsingle electron memorynumerical simulationtunneling ratecharge stateconference paper