Geisler, C.C.GeislerHördt, W.W.HördtKluska, SvenSvenKluskaMondon, AndrewAndrewMondonHopman, SybilleSybilleHopmanGlatthaar, MarkusMarkusGlatthaar2022-03-042022-03-042015https://publica.fraunhofer.de/handle/publica/23912510.1016/j.solmat.2014.11.010Continuous wave laser processes used to create solar cells with selective emitter and plated Ni-Cu front contacts are a widely discussed topic. Particularly low adhesion of the front metal contact has been identified as a serious challenge. In this work a detailed surface characterization of laser doped and patterned front sides of solar cells shows that formation of silicon oxynitride hinders nickel silicide formation and reduces contact adhesion of Ni-Cu plated contacts. In order to overcome the observed tradeoff between metal contact adhesion and penetration of the pn-junction, this paper presents a novel process sequence based on the formation of a deep selective emitter using a green continuous waver laser and subsequent patterning of the dielectric using a nanosecond-pulsed laser.enSolarzellen - Entwicklung und CharakterisierungSilicium-PhotovoltaikCharakterisierung von Prozess- und Silicium-MaterialienDotierung und DiffusionOberflächen - KonditionierungPassivierungLichteinfangKontaktierung und StrukturierungAdhesionProcessingCellplatingpFF621journal article