Kim, SeongjunSeongjunKimKim, Hong-KiHong-KiKimLim, MinwhoMinwhoLimJeong, SeonghoonSeonghoonJeongKang, Min-JaeMin-JaeKangKang, Min-SikMin-SikKangLee, Nam-SukNam-SukLeeCoung, Tran VietTran VietCoungKim, HyunsooHyunsooKimErlbacher, TobiasTobiasErlbacherBauer, Anton J.Anton J.BauerShin, Hoon-KyuHoon-KyuShin2022-03-062022-03-062019https://publica.fraunhofer.de/handle/publica/26065210.1155/2019/5231983In this work, the ohmic contact mechanism of Ni electrodes on C-faced 4H-n-SiC was investigated by evaluating the electrical and microstructural properties in the contact interface as a function of annealing temperatures ranging from 950 to 1100°C. We determined that Ni-silicide, especially the NiSi phase, plays a key role in the formation of ohmic contacts rather than an increase in carbon vacancies in the C-faced SiC substrate. A vertically oriented NiSi phase was observed in the thermally annealed sample at the optimized temperature that behaves as a current path. A further increase in annealing temperature leads to the degradation of ohmic behavior due to the formation of horizontal-type NiSi in the Ni-rich Ni-silicide/NiSi/SiC structure.en670530620journal article