Pichler, P.P.Pichler2022-03-092022-03-092002https://publica.fraunhofer.de/handle/publica/340230In a series of experiments, Chantre et al. measured vacancy--phosphorus pairs after laser annealing of silicon samples. These experiments were reproduced by numerical simulations of the diffusion and recombination of vacancies and self--interstitials and the interaction of vacancies with phosphorus atoms. The simulations lead to a range of possible values for the equilibrium concentration of vacancies.ensiliciumGitterleerstelleGleichgewichtskonzentrationDiffusionskoeffizientLaserausheilung670620530conference paper