Driad, RachidRachidDriadLösch, R.R.LöschSchneider, K.K.SchneiderMakon, R.E.R.E.MakonLudwig, M.M.LudwigWeimann, G.G.Weimann2022-03-032022-03-032006https://publica.fraunhofer.de/handle/publica/21131310.1002/pssc.2005641022-s2.0-33646172559In this paper, we report the development and performance of a complete InP-based DHBT manufacturable technology from materials growth to device and integrated circuits realizations. The InGaAs/InP DHBTs were grown in a multi-wafer solid phosphorus MBE system. High frequency devices with an effective emitter area of 4.8 µm2 exhibited peak f(ind T) and f(ind MAX) values of 250 and 270 GHz, respectively, at a collector current density of about 4 mA/µm2. Using this technology, distributed amplifiers and low power consumption selectors, have been successfully fabricated and tested above 80 Gbit/s.enIII-V semiconductormolecular beam epitaxymicrowave integrated electronicsemiconductor devicebipolar transistormicroelectronicIII-V Halbleitermolekulare Strahlepitaxieintegrierte MikrowellenschaltungBipolartransistorMikroelektron621667journal article